Performance Analysis of 2D FET with Diverse Dielectrics For Low Power

Abstract

In recent years, two-dimensional field effect transistors (2D FETs) have attracted considerable attention as promising candidates for next-generation electronic devices. This work presents a detailed performance analysis of 2D FETs employing channel materials such as MoS₂, MoSe₂, MoTe₂, and WS₂, evaluated with different dielectric layers for low-power electronic applications. These materials belong to the transition metal dichalcogenide (TMD) family and exhibit unique electronic characteristics, including suitable band gaps, high carrier mobility, and strong electrostatic control, making them ideal for nanoscale transistor channels.The study examines the effect of various dielectric materials, including conventional silicon dioxide (SiO₂) and high-k dielectrics such as hafnium oxide (HfO₂), aluminum oxide (Al₂O₃), and air. Key device performance parameters analyzed in this work include subthreshold swing, ON/OFF current ratio, transconductance, drain voltage versus carrier density, carrier velocity versus drain voltage, and gate capacitance versus gate voltage. The results indicate that the selection of dielectric material significantly influences device behavior, where high-k dielectrics—particularly HfO₂—demonstrate improved electrostatic control and reduced power consumption compared to SiO₂.Additionally, the intrinsic properties of MoS₂, MoSe₂, MoTe₂, and WS₂, including their direct and indirect bandgap characteristics, play an important role in determining overall transistor performance. The interface quality between the 2D channel and dielectric layer is also evaluated, as it directly affects carrier transport and switching efficiency. Simulation outcomes reveal that combining TMD-based channels with high-k dielectric materials enhances subthreshold characteristics and overall energy efficiency. These findings highlight the strong potential of 2D FETs for future low-power integrated circuit applications.